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Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of SiC MOSFETs
Haihong Qin  Ceyu Ma  Ziyue Zhu  Yangguang Yan
Vol. 18, No. 4, pp. 1255-1267, Jul. 2018
10.6113/JPE.2018.18.4.1255

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718